Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next-Generation High-Density Storage Systems.
第一作者:
Giuk,Kim
第一单位:
Department of Electrical engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.
作者:
DOI
10.1002/advs.202510155
PMID
40847772
发布时间
2025-10-30
- 浏览0
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
2025年12卷40期
e10155页
相似文献
- 中文期刊
- 外文期刊
- 学位论文
- 会议论文


换一批



