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Neural Synaptic Simulation Based on ZnAlSnO Thin-Film Transistors.

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第一作者： Yang,Zhao

第一单位： Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China.;School of Electrical and Computer Science, Jilin Jianzhu University, Changchun 130118, China.

作者： Yang,Zhao ^[1] ; Chao,Wang ^[1] ; Laizhe,Ku ^[1] ; Liang,Guo ^[2] ; Xuefeng,Chu ^[1] ; Fan,Yang ^[1] ; Jieyang,Wang ^[1] ; Chunlei,Zhao ^[1] ; Yaodan,Chi ^[1] ; Xiaotian,Yang ^[3]

作者单位： Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China.;School of Electrical and Computer Science, Jilin Jianzhu University, Changchun 130118, China. ^[1] Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China.;Department of Basic Science, Jilin Jianzhu University, Changchun 130118, China. ^[2] Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China.;Department of Chemistry, Jilin Normal University, Siping 136000, China. ^[3]

关键词 aluminum zinc tin oxide (znalsno)neural synaptic device neuromorphic computation thin-film transistor

DOI 10.3390/mi16091025

PMID 41011915

发布时间 2025-09-30

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