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Dynamic pass bias control for temperature-resilient neural networks using vertical NAND flash memory.

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第一作者： Sung-Ho,Park

第一单位： Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Korea.

作者： Sung-Ho,Park ^[1] ; Jiseong,Im ^[1] ; Jonghyun,Ko ^[1] ; Joon,Hwang ^[1] ; Yeongheon,Yang ^[2] ; Jong-Won,Back ^[2] ; Ryun-Han,Koo ^[1] ; In-Seok,Lee ^[1] ; Dongbeen,Shin ^[1] ; Mingyun,Oh ^[1] ; Gyuweon,Jung ^[1] ; Jong-Ho,Lee ^[3]

作者单位： Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Korea. ^[1] Research and Development Division, SK hynix Inc, Icheon, 17336, Korea. ^[2] Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, 08826, Korea. jhl@snu.ac.kr. ^[3]

关键词 Neural network Neuromorphic computing V-NAND flash memory

DOI 10.1186/s40580-025-00513-1

PMID 41026312

发布时间 2025-10-03

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