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Defect-induced subgap state engineering in neuromorphic metal-oxide phototransistors for in-sensor color processing.

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第一作者： Eun Chong,Ju

第一单位： Department of Intelligent Semiconductor Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea. skpark@cau.ac.kr.

作者： Eun Chong,Ju ^[1] ; Dong Hwan,Byeon ^[1] ; Jong Min,Lee ^[1] ; Yu-Jung,Cha ^[2] ; Hyung Gon,Shin ^[3] ; Seongil,Im ^[3] ; Jeong-Wan,Jo ^[4] ; Yong-Hoon,Kim ^[5] ; Sung Kyu,Park ^[1] ; Sung Woon,Cho ^[6]

作者单位： Department of Intelligent Semiconductor Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea. skpark@cau.ac.kr. ^[1] Department of Advanced Components and Materials Engineering, Sunchon National University, Suncheon, Jeonnam 57922, Republic of Korea. swcho@scnu.ac.kr.;Department of Energy Technology, Korea Institute of Energy Technology, Naju, Jeonnam 58330, Republic of Korea. ^[2] Department of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea. ^[3] Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK. ^[4] School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea. yhkim76@skku.edu. ^[5] Department of Advanced Components and Materials Engineering, Sunchon National University, Suncheon, Jeonnam 57922, Republic of Korea. swcho@scnu.ac.kr. ^[6]

DOI 10.1039/d5mh01018g

PMID 41044935

发布时间 2026-01-13

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Defect-induced subgap state engineering in neuromorphic metal-oxide phototransistors for in-sensor color processing.

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Defect-induced subgap state engineering in neuromorphic metal-oxide phototransistors for in-sensor color processing.

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