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Site-Controlled Carbon Implantation for Quantum Emitter Engineering in Hexagonal Boron Nitride.

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第一作者： Yun-Tao,Wu

第一单位： State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, P. R. China.;University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China.

作者： Yun-Tao,Wu ^[1] ; Xu,Guo ^[1] ; Peng-Tao,Jing ^[2] ; Guan-Lin,Liu ^[1] ; Zhen,Cheng ^[2] ; Ji-Lian,Xu ^[2] ; Yang,Bao ^[2] ; Hai,Xu ^[3] ; Li-Gong,Zhang ^[2] ; Da,Zhan ^[3] ; Jia-Xu,Yan ^[2] ; Lei,Liu ^[3] ; De-Zhen,Shen ^[3]

作者单位： State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, P. R. China.;University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China. ^[1] State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, P. R. China. ^[2] State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, P. R. China.;State Key Laboratory of Optoelectronic Information Acquisition and Protection Technology, Anhui University, Hefei 230601, P. R. China. ^[3]

关键词 carbon doping defect engineering focused helium ion beam hexagonal boron nitride single photon emission

DOI 10.1021/acsami.5c16791

PMID 41250605

发布时间 2025-11-27

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准确一般字义偏差语意偏离译文作用小提交