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Broadband Neuromorphic Phototransistors Based on Oxygen Vacancy Modulation in Indium-Gallium-Zinc Oxide Films.

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第一作者： Minji,Kim

第一单位： School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.

作者： Minji,Kim ^[1] ; Jeehoon,Kim ^[1] ; Hyunhee,Kim ^[1] ; San,Nam ^[1] ; Donghyun,Kang ^[1] ; Jong Min,Lee ^[2] ; Eungseon,Yeon ^[3] ; Jiwan,Kim ^[4] ; Jeong-Wan,Jo ^[5] ; Do Kyung,Hwang ^[6] ; Sung Kyu,Park ^[2] ; Yong-Hoon,Kim ^[1]

作者单位： School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea. ^[1] School of Intelligent Semiconductor Engineering, Chung-Ang University, Seoul 06974, Republic of Korea. ^[2] Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.;KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea. ^[3] Department of Advanced Materials Engineering, Kyonggi University, Suwon 16227, Republic of Korea. ^[4] Electrical Engineering Division, Department of Engineering, University of Cambridge, CambridgeCB2 1TN , United Kingdom. ^[5] Center of Quantum Technology, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea.;KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea.;Division of Nanoscience and Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea. ^[6]

关键词 indium?gallium-zinc oxide near-infrared neuromorphic optoelectronic synapse phototransistors

DOI 10.1021/acsami.5c18293

PMID 41351510

发布时间 2025-12-18

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