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Charge Trapping Dynamics of Nanofloating Gates in Synaptic Transistors Revealed by Genomic Simulation for High-Performance Neuromorphic Device Design.

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第一作者： Lanbin,Huang

第一单位： National & Local United Engineering Laboratory of Flat Panel Display Technology, Institute of Optoelectronic Display, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China.

作者： Lanbin,Huang ^[1] ; Weiwei,Gao ^[1] ; Jiajun,Xiong ^[2] ; Jiali,Liang ^[1] ; Donghua,Ye ^[1] ; Gengxu,Chen ^[2] ; Huipeng,Chen ^[2]

作者单位： National & Local United Engineering Laboratory of Flat Panel Display Technology, Institute of Optoelectronic Display, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China. ^[1] National & Local United Engineering Laboratory of Flat Panel Display Technology, Institute of Optoelectronic Display, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China.;Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China. ^[2]

关键词 carrier microscopic dynamics concentration gradient high-throughput computational screening quantum dot floating-gate transistor size effect

医学主题词晶体管, 电子(Transistors, Electronic);量子点(Quantum Dots);设备设计(Equipment Design);突触(Synapses)

DOI 10.1021/acsami.5c24342

PMID 41543009

发布时间 2026-01-29

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