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Highly Stable Chip-Scale Tellurium Memtransistor Based on Field-Induced Oxygen Vacancy Migration.

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第一作者： Eunjeong,Cho

第一单位： Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea.;Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea.

作者： Eunjeong,Cho ^[1] ; Seyoung,Oh ^[1] ; Ojun,Kwon ^[1] ; Min Jeong,Kim ^[1] ; Wondeok,Seo ^[1] ; Minhee,Kim ^[1] ; Shinhoi,Kim ^[1] ; Yeongeun,Kwon ^[1] ; Yedam,Kim ^[1] ; Yujung,Kim ^[1] ; Jongwon,Yoon ^[2] ; Woojin,Park ^[1] ; Byungjin,Cho ^[3]

作者单位： Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea.;Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea. ^[1] Energy and Environment Materials Research Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea. ^[2] Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea.;Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea.;Advanced Energy Research Institute, Chungbuk National University, Chungdae-ro 1, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea.;Biomedical Research Institute, Chungbuk National University Hospital, 766, 1 Sunhwan-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea. ^[3]

关键词 Te memtransistor chip-scale 8 × 8 array devices field-induced oxygen vacancy migration gate-tunable resistive switching heterosynaptic plasticity

DOI 10.1021/acsami.5c20005

PMID 41838400

发布时间 2026-04-02

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